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标题: MIL-PRF-19500/655F 17 January 2014 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION [打印本页]

作者: zengluyuan 时间: 2014-2-17 10:40:25 标题: MIL-PRF-19500/655F 17 January 2014 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION

MIL-PRF-19500/655F
17 January 2014
SUPERSEDING
MIL-PRF-19500/655E
14 February 2012
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED
TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7424U, 2N7425U, AND 2N7426U,
JANTXVR AND F AND JANSR AND F

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作者: admin 时间: 2014-2-17 17:33:44

谢谢您的分享，金币已奖励。

作者: nbjwbzj 时间: 2015-6-13 14:35:54

谢谢分享！！！！！！！

作者: ygs67 时间: 2015-6-13 15:11:15

多谢分享！

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